BASIC PHENOMENA IN REACTIVE LOW-PRESSURE PLASMAS USED FOR DEPOSITION AND ETCHING - CURRENT STATUS

被引:46
作者
TURBAN, G
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D O I
10.1351/pac198456020215
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:215 / 230
页数:16
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[41]   STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J].
DONNELLY, VM ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5273-5276
[42]   SILANE DISSOCIATION MECHANISMS AND THIN-FILM FORMATION IN A LOW-PRESSURE MULTIPOLE DC DISCHARGE [J].
DREVILLON, B ;
HUC, J ;
LLORET, A ;
PERRIN, J ;
DEROSNY, G ;
SCHMITT, JPM .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :646-648
[43]  
DREVILLON B, 1981, 5TH P INT S PLASM CH, V2, P634
[44]  
DREVILLON B, UNPUB APPL PHYS LETT
[45]  
EDELSON D, 1983, UNPUB J APPL PHYS
[46]  
Elliott D.J., 1982, INTEGRATED CIRCUIT F
[47]  
EPHRATH LM, 1977, J ELECTROCHEM SOC, V124, pC284
[48]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[49]  
FLAMM DL, 1979, SOLID STATE TECHNOL, V22, P109
[50]   MULTIPLE-ETCHANT LOADING EFFECT AND SILICON ETCHING IN CLF3 AND RELATED MIXTURES [J].
FLAMM, DL ;
WANG, DNK ;
MAYDAN, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2755-2760