BASIC PHENOMENA IN REACTIVE LOW-PRESSURE PLASMAS USED FOR DEPOSITION AND ETCHING - CURRENT STATUS

被引:46
作者
TURBAN, G
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D O I
10.1351/pac198456020215
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:215 / 230
页数:16
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[91]   A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .2. PROBE MEASUREMENTS OF ELECTRON PROPERTIES IN AN RF PLASMA-ETCHING REACTOR [J].
KUSHNER, MJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2939-2946
[92]  
LAPORTE P, 1981, MICROCIRCUIT ENG C L
[93]   PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J].
LEHMANN, HW ;
WIDMER, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :319-326
[94]   PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].
MATSUDA, A ;
TANAKA, K .
THIN SOLID FILMS, 1982, 92 (1-2) :171-187
[95]   SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J].
MATSUO, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02) :587-594
[96]   REACTANT SUPPLY IN REACTIVE ION ETCHING [J].
MAUER, JL ;
LOGAN, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :404-406
[97]   MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].
MAUER, JL ;
LOGAN, JS ;
ZIELINSKI, LB ;
SCHWARTZ, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1734-1738
[98]   SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES [J].
MAYER, TM ;
BARKER, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :757-763
[99]  
Melliar-Smith C. M., 1978, THIN FILM PROCESSES
[100]   THE PREPARATION OF INSITU DOPED HYDROGENATED AMORPHOUS-SILICON BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION [J].
MEYERSON, BS ;
SCOTT, BA ;
WOLFORD, DJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1461-1465