Structure and electronic properties of InN and In-rich group III-nitride alloys

被引:229
作者
Walukiewicz, W [1 ]
Ager, JW
Yu, KM
Liliental-Weber, Z
Wu, J
Li, SX
Jones, RE
Denlinger, JD
机构
[1] Lawrence Berkeley Lab, Mat Sci Div, Elect Mat Program, Berkeley, CA 94720 USA
[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Nat Lab, Adv Light Source Div, Berkeley, CA 94720 USA
关键词
D O I
10.1088/0022-3727/39/5/R01
中图分类号
O59 [应用物理学];
学科分类号
摘要
The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10(18) cm(-3) and mobilities exceeding 2000 cm(2) (Vs)(-1). Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 +/- 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k (.) p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical Studies Of irradiated InN reveal a lame Burstein-Moss shift of the absorption edge with increasing n. Fundamental Studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated.
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收藏
页码:R83 / R99
页数:17
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