Influence of annealing temperature upon deep levels in 6H SiC

被引：2

作者：

Perjeru, F ^{[1
]}

Woodin, RL

Kordesch, ME

机构：

[1] Ohio Univ, Dept Phys & Astron, Clippinger Lab 251A, Athens, OH 45701 USA

[2] Extreme Devices Inc, Austin, TX 78744 USA

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

SiC; defects; DLTS;

D O I：

10.1016/S0921-4526(01)00871-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The evolution of deep levels that depend upon annealing temperature is investigated for p-type 6 H SiC-Al Schottky barriers. Several samples, cut from the same wafer, have been annealed at 400degreesC, 600degreesC and 800degreesC, in air, while on one sample no annealing has been done. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in all four sets of samples. The results show that only electron traps can be detected in the temperature range 220-440 K. Defects with activation energies having values between 0.12-0.37eV are detected by DLTS. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：695 / 697

页数：3

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