Screening and interlayer coupling in multilayer MoS2

被引：158

作者：

Das, Saptarshi ^{[1
]}

Appenzeller, Joerg ^{[1
]}

机构：

[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 04期

基金：

美国国家科学基金会;

关键词：

di-chalcogenides; MoS2; FETs; mobility; INTEGRATED-CIRCUITS;

D O I：

10.1002/pssr.201307015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-dimensional layered semiconducting di-chalcogenides are emerging as promising candidates for post-SiCMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back-gated multilayer MoS2 field-effect transistors. We observe a non-monotonic trend in the extracted effective field-effect mobility with layer thickness which is of relevance for the design of high-performance devices. We also discuss a detailed theoretical model based on Thomas-Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two-dimensional layered system. A model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS2. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：268 / 273

页数：6

共 18 条

[1] High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].

Das, Saptarshi ;

Chen, Hong-Yan ;

Penumatcha, Ashish Verma ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (01) :100-105

[2] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[3]

Fizav R, 1967, PHYS REV, V163, P743

[4] Charge distribution and screening in layered graphene systems [J].

Guinea, F. .

PHYSICAL REVIEW B, 2007, 75 (23)

[5] Band-gap transition induced by interlayer van der Waals interaction in MoS2 [J].

Han, S. W. ;

Kwon, Hyuksang ;

Kim, Seong Keun ;

Ryu, Sunmin ;

Yun, Won Seok ;

Kim, D. H. ;

Hwang, J. H. ;

Kang, J. -S. ;

Baik, J. ;

Shin, H. J. ;

Hong, S. C. .

PHYSICAL REVIEW B, 2011, 84 (04)

[6]

Kuhn KJ, 2009, DES AUT CON, P310

[7] Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature [J].

Li, Hai ;

Yin, Zongyou ;

He, Qiyuan ;

Li, Hong ;

Huang, Xiao ;

Lu, Gang ;

Fam, Derrick Wen Hui ;

Tok, Alfred Iing Yoong ;

Zhang, Qing ;

Zhang, Hua .

SMALL, 2012, 8 (01) :63-67

[8] MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric [J].

Liu, Han ;

Ye, Peide D. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :546-548

[9] GRAPHENE ELECTRONICS Thinking outside the silicon box [J].

Palacios, Tomas .

NATURE NANOTECHNOLOGY, 2011, 6 (08) :464-465

[10] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

← 1 2 →