Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

被引：43

作者：

Dimitrijev, S ^{[1
]}

Tanner, P ^{[1
]}

Harrison, HB ^{[1
]}

机构：

[1] Griffith Univ, Sch Microelect Engn, Brisbane, Qld 4111, Australia

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

oxide; silicon; silicon carbide; slow trap; nitridation;

D O I：

10.1016/S0026-2714(99)00022-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate the unique ability of a newly developed slow-trap profiling technique to characterise silicon-based MOS capacitors in strong inversion. We also demonstrate the applicability of the slow-trap profiling technique for the characterisation of oxides grown on SiC. The obtained slow-trap profiles show that NO nitridation eliminates while N2O creates defects acting as slow traps in the case of both Si and SiC substrates. The corresponding effects of nitridation on interface traps and fixed oxide charge are also discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：441 / 449

页数：9

共 42 条

[1] ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE [J].

ALOK, D ;

MCLARTY, PK ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2177-2178

[2] Characterization of plasma induced damage using transient current measurements [J].

Balasinski, A ;

Petti, C ;

Bamnolker, H ;

Ramkumar, K ;

Chung, A .

1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, :26-29

[3] MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES [J].

BHAT, M ;

KIM, J ;

YAN, J ;

YOON, GW ;

HAN, LK ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :421-423

[4] ELECTRICAL-PROPERTIES AND RELIABILITY OF MOSFETS WITH RAPID THERMAL NO-NITRIDED SIO2 GATE DIELECTRICS [J].

BHAT, M ;

WRISTERS, DJ ;

HAN, LK ;

YAN, J ;

FULFORD, HJ ;

KWONG, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :907-914

[5] Nitridation of silicon-dioxide films grown on 6H silicon carbide [J].

Dimitrijev, S ;

Li, HF ;

Harrison, HB ;

Sweatman, D .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (05) :175-177

[6] Slow state characterization by measurements of current-voltage characteristics of MOS capacitors [J].

Dimitrijev, S ;

Tanner, P ;

Yao, ZQ ;

Harrison, HB .

MICROELECTRONICS AND RELIABILITY, 1997, 37 (07) :1143-1146

[7]

DIMITRIJEV S, 1996, 27 IEEE SEM INT SPEC

[8] Stow states in vacuum ultraviolet irradiated metal-oxide-silicon systems [J].

Druijf, KG ;

deNijs, JMM ;

vanderDrift, E ;

Granneman, EHA ;

Balk, P .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) :1505-1510

[9] CHARGE-EXCHANGE MECHANISMS OF SLOW STATES IN SI/SIO2 [J].

DRUIJF, KG ;

DENIJS, JMM ;

VANDERDRIFT, E ;

GRANNEMAN, EHA ;

BALK, P .

MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) :231-234

[10] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

REBER, RA ;

MEISENHEIMER, TL ;

SCHWANK, JR ;

SHANEYFELT, MR ;

RIEWE, LC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5058-5074

← 1 2 3 4 5 →