Thickness dependence of ferroelectricity in heteroepitaxial BaTiO3 thin film capacitors

Heteroepitaxial BaTiO3 films of various thicknesses ranging from 12 nm to 79 nm were prepared on SrRuO3/SrTiO3 substrates by radio-frequency magnetron sputtering employing a two-step deposition technique, and the crystallographic and ferroelectric properties of the heteroepitaxial films were evaluated. A ferroelectric hysteresis loop was clearly observed in the heteroepitaxial BaTiO3 films even when the thickness was reduced to 12 nm, probably due to improved crystallinity at the interface between the ferroelectric film and the electrodes through optimization of the preparation technique. The observation of hysteresis at the temperature of 200 degrees C was explained in terms of modification of the Curie temperature from the inherent 130 degrees C to far above 200 degrees C by lattice misfit strain. A possible relationship between the artificially raised Curie temperature and the limited thickness dependence of ferroelectricity was discussed.