Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

被引：49

作者：

Slupinski, T

Munekata, H

Oiwa, A

机构：

[1] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 227, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1457526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown (InyGa1-y)(1-x)MnxAs ferromagnetic semiconductor layers with Mn composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., ysimilar to0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x(eff), following the empirical equation T-C=1300xx(eff). We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x(eff)greater than or equal to0.08) and the hole concentration is of the order of 10(19) cm(-3). (C) 2002 American Institute of Physics.

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页码：1592 / 1594

页数：3

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