Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si(100) substrate

被引：31

作者：

Balakrishnan, G ^{[1
]}

Huang, SH ^{[1
]}

Khoshakhlagh, A ^{[1
]}

Jallipalli, A ^{[1
]}

Rotella, P ^{[1
]}

Amtout, A ^{[1
]}

Krishna, S ^{[1
]}

Haines, CP ^{[1
]}

Dawson, LR ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 06期

关键词：

D O I：

10.1049/el:20064286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic vertical cavity surface emitting lasers (VCSELs) on Si are demonstrated. The GaSb multi-quantum well active region embedded in an AI(Ga)Sb half-wave cavity spacer layer enables lasing under room-temperature optically-pumped conditions. The 13% lattice mismatch is accommodated by a spontaneously formed 2-D array of 90 degrees misfit dislocations at the AlSb/Si interface. This growth mode produces very low defect density (similar to 8 x 10(5)/cm(2)) and relaxed materials growth (98%) without the use of a buffer layer. Presented are VCSEL lasing spectra, light-in against light-out curves along with defect density measurements performed by microscopy and etch-pit density. A threshold excitation density of I-th = 0(.)1 mJ/cm(2) and a multimode lasing spectrum peaked at 1.62 mu m, results from a 3 mm pump-spot size.

引用

页码：350 / 352

页数：3

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