Bandtail characteristics in InN thin films

被引：66

作者：

Shen, WZ

Jiang, LF

Yang, HF

Meng, FY

Ogawa, H

Guo, QX

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

[2] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1464219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (similar to90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers. (C) 2002 American Institute of Physics.

引用

页码：2063 / 2065

页数：3

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