Leakage current mechanisms in lead-based thin-film ferroelectric capacitors

被引:139
作者
Nagaraj, B [1 ]
Aggarwal, S [1 ]
Song, TK [1 ]
Sawhney, T [1 ]
Ramesh, R [1 ]
机构
[1] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
关键词
D O I
10.1103/PhysRevB.59.16022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Current-voltage (I-V) behaviors of Pb(Zr, Ti)O-3-based capacitors with (La, Sr)CoO3 electrodes were studied to investigate the dominant leakage mechanism. Epitaxial (La,Sr)CoO3/Pb(Zr,Ti)O-3/(La,Sr)CoO3 capacitors were fabricated to simplify the analysis and eliminate any effects of granularity. The I-V characteristics were almost symmetric and temperature dependent with a positive temperature coefficient. The leakage current at low fields (<0.5 V or 10 kV/cm) shows Ohmic behavior with a slope of nearly 1 and is nonlinear at higher voltages and temperatures. Further analysis suggests that at higher fields and temperatures, bulk-limited field-enhanced thermal ionization of trapped carriers (i.e., Poole-Frenkel emission) is the controlling mechanism. The activation energies calculated for the films are in the range 0.5-0.6 eV. These energies are compatible with Ti4+ ion acting as the Poole-Frenkel centers. [S0163-1829(99)01124-8].
引用
收藏
页码:16022 / 16027
页数:6
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