CVD diamond photoconductors for picosecond radiation pulse characterisation

被引:15
作者
Foulon, F
Bergonzo, P
Jany, C
Gicquel, A
Pochet, T
机构
[1] CTR ETUD SACLAY,SPE,DEIN,CEA TECHNOL AVANCEES,LETI,F-91191 GIF SUR YVETTE,FRANCE
[2] UNIV PARIS 13,CNRS,LAB INGN MAT & HAUTES PRESS,F-93430 VILLETANEUSE,FRANCE
关键词
photoconductor; CVD diamond film; radiation; texture;
D O I
10.1016/0925-9635(95)00466-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[100]-, [110]- and non-textured polycrystalline diamond films deposited by microwave plasma enhanced chemical vapour deposition (MPCVD) have been used for the fabrication of resistive photoconductors. Such detectors can be used to measure the intensity and the temporal shape of pulsed radiation such as IR, visible, UV and X-ray. The photodetectors were characterised under fast pulsed Nd:Yag laser radiation (lambda=266, 532 and 1064 nm, 30 ps FWHM) and steady state X-ray (40 keV). Detector pulsed signals having FWHM in the range 350-600 ps were obtained. Film texture and nitrogen concentration in the film are found to have a significant influence on the detector response time and on carrier lifetime.
引用
收藏
页码:732 / 736
页数:5
相关论文
共 25 条
[1]   SATURATION OF IMPURITY PHOTOCONDUCTIVITY IN N-GAAS WITH INTENSE YAG LASER LIGHT [J].
CELLER, GK ;
MISHRA, S ;
BRAY, R .
APPLIED PHYSICS LETTERS, 1975, 27 (05) :297-299
[2]  
CUZIN M, 1993, MATER RES SOC S P, V302, P169
[3]   CVD DIAMOND FILMS FOR RADIATION DETECTION [J].
FOULON, F ;
POCHET, T ;
GHEERAERT, E ;
DENEUVILLE, A .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) :927-932
[4]  
FOULON F, 1994, MATER RES SOC SYMP P, V339, P185, DOI 10.1557/PROC-339-185
[5]   PICOSECOND GAAS X-RAY AND GAMMA-RAY PHOTODETECTORS [J].
FRIANT, A ;
SALIOU, C ;
GALLI, R ;
BARDAY, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02) :318-322
[6]   DIAMOND DEPOSITION IN A BELL-JAR REACTOR - INFLUENCE OF THE PLASMA AND SUBSTRATE PARAMETERS ON THE MICROSTRUCTURE AND GROWTH-RATE [J].
GICQUEL, A ;
ANGER, E ;
RAVET, MF ;
FABRE, D ;
SCATENA, G ;
WANG, ZZ .
DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) :417-424
[7]   BANDWIDTH ENHANCED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BASED ON BACKGATED IP STRUCTURES [J].
GREGER, E ;
REINGRUBER, K ;
RIEL, P ;
DOHLER, GH ;
ROSENZWEIG, J ;
LUDWIG, M .
APPLIED PHYSICS LETTERS, 1994, 65 (17) :2223-2225
[8]   THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].
GROT, SA ;
GILDENBLAT, GS ;
HATFIELD, CW ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102
[9]   HIGH-SPEED PHOTODETECTOR APPLICATIONS OF GAAS AND INXGA1-XAS/GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].
GUPTA, S ;
WHITAKER, JF ;
WILLIAMSON, SL ;
MOUROU, GA ;
LESTER, L ;
HWANG, KC ;
HO, P ;
MAZUROWSKI, J ;
BALLINGALL, JM .
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) :1449-1455
[10]   Influence of the crystalline structure on the electrical properties of CVD diamond films [J].
Jany, C ;
Foulon, F ;
Bergonzo, P ;
Brambilla, A ;
Silva, F ;
Gicquel, A ;
Pochet, T .
DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) :741-746