The capacitive origin of the picosecond electrical transients detected by a photoconductively gated scanning tunneling microscope

被引：57

作者：

Groeneveld, RHM

vanKempen, H

机构：

[1] Research Institute for Materials, University of Nijmegen, NL-6525 ED Nijmegen

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 15期

关键词：

D O I：

10.1063/1.117538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental results and numerical calculations on the detection of picosecond electrical transients by a photoconductively gated scanning tunneling microscope. We show that the transient signal detected in the tunneling regime is coupled by the 5 fF geometric capacitance between tip and sample leading to a correlation current that is linearly proportional to the tunnel conductance. (C) 1996 American Institute of Physics.

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页码：2294 / 2296

页数：3

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