An integrated heterojunction bipolar transistor cascode opto-electronic mixer

被引：10

作者：

Betser, Y ^{[1
]}

Lasri, J

Sidorov, V

Cohen, S

Ritter, D

Orenstein, M

Eisenstein, G

Seeds, AJ

Madjar, A

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[3] Univ London Univ Coll, Dept Elect & Elect Engn, London WC1E 7JE, England

[4] RAFAEL, IL-31021 Haifa, Israel

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 07期

关键词：

cascode; conversion gain; mixer; opto-electronic; photo-HBT;

D O I：

10.1109/22.775479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated electrically pumped opto-electronic mixer consisting of two InP/GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated, Intrinsic downconversion gains of 18.2 and 8.9 dB at RP optical modulation frequencies of 3 and 9.5 GHz were obtained, The performance of the cascode mixer and a single heterojunction bipolar transistor (IJ;ET) opto-electronic mixer are compared. The performance of the cascode mixer was superior to the single HET mixer, mainly at high frequencies, Up and down mixing conversion gains were measured and found comparable, A simulation was carried out by solving the nonlinear differential equations that correspond to the large-signal equivalent circuit. The results of the simulation enabled us to identify the principal nonlinear components in the equivalent circuit.

引用

页码：1358 / 1364

页数：7

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