Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces

被引：39

作者：

Tokunaga, Y. ^{[1
]}

Kaneko, Y.

He, J. P.

Arima, T.

Sawa, A.

Fujii, T.

Kawasaki, M.

Tokura, Y.

机构：

[1] Japan Sci & Technol Agcy, ERATO, Spin Superstruct Project, Tsukuba, Ibaraki 3058562, Japan

[2] Japan Sci & Technol Agcy, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[3] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[4] AIST, CERC, Tsukuba, Ibaraki 3058562, Japan

[5] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期

关键词：

D O I：

10.1063/1.2208922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the current-voltage (I-V) characteristics and resistance switching at the interface between metal electrodes M (=Pt, Au, Ag, Al, Ti, and Mg) and atomically flat cleaved (001) surfaces of La1-xSr1+xMnO4 (x=0-1.0) single crystals by using a three-probe method. Hysteretic I-V characteristics, indicating the appearance of the resistance switching, were observed in the junctions for M=Mg, Al, and Ti, which have relatively shallow work functions. The resistance switching ratio depends on the hole doping x and the optimal doping level is around x=0.5, verifying that the resistance switching property can be controlled by the doping level.

引用

页数：3

共 11 条

[1] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] Orbital-state-mediated phase-control of manganites [J].

Konishi, Y ;

Fang, Z ;

Izumi, M ;

Manako, T ;

Kasai, M ;

Kuwahara, H ;

Kawasaki, M ;

Terakura, K ;

Tokura, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1999, 68 (12) :3790-3793

[4] Structural and magnetic properties of the single-layer manganese oxide La1-xSr1+xMnO4 -: art. no. 024435 [J].

Larochelle, S ;

Mehta, A ;

Lu, L ;

Mang, PK ;

Vajk, OP ;

Kaneko, N ;

Lynn, JW ;

Zhou, L ;

Greven, M .

PHYSICAL REVIEW B, 2005, 71 (02)

[5] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[6] MAGNETIC AND ELECTRONIC-PROPERTIES IN HOLE-DOPED MANGANESE OXIDES WITH LAYERED STRUCTURES - LA1-XSR1+XMNO4 [J].

MORITOMO, Y ;

TOMIOKA, Y ;

ASAMITSU, A ;

TOKURA, Y ;

MATSUI, Y .

PHYSICAL REVIEW B, 1995, 51 (05) :3297-3300

[7] Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403 [J].

Odagawa, A ;

Sato, H ;

Inoue, IH ;

Akoh, H ;

Kawasaki, M ;

Tokura, Y ;

Kanno, T ;

Adachi, H .

PHYSICAL REVIEW B, 2004, 70 (22) :224403-1

[8] Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance [J].

Oka, T ;

Nagaosa, N .

PHYSICAL REVIEW LETTERS, 2005, 95 (26) :1-4

[9] Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510 [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3

[10] Nonvolatile memory with multilevel switching: A basic model [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (17) :178302-1

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