Effect of Ar+O-2 plasma etching on microwave characteristics of YBa2Cu3O7-x based resonators

被引：6

作者：

Ban, M ^{[1
]}

Takenaka, T ^{[1
]}

Hayashi, K ^{[1
]}

Suzuki, K ^{[1
]}

Enomoto, Y ^{[1
]}

机构：

[1] KAWASAKI HEAVY IND LTD,AKASHI TECH INST,AKASHI,HYOGO 673,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 08期

关键词：

YBCO; Ar + O-2 plasma; oxygen effusion; micro-stripline resonator; oxygen radical;

D O I：

10.1143/JJAP.35.4318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an improvement in the patterning process of microwave devices by suppressing the oxygen effusion from the patterning edge of YBa2Cu3O7-x (YBCO) thin film. The damage in the edge is estimated from unloaded Q factors of YBCO-based micro-stripline resonators, because the high frequency current is limited along the edge. The unloaded Q factors increase with the oxygen content during the plasma etching. This result suggests that oxygen radicals in the Ar + O-2 plasma restore the oxygen in the edge and reduce the loss of microwave devices.

引用

页码：4318 / 4321

页数：4

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