共 15 条
Microwave switches based on graphene
被引:29
作者:

Dragoman, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania

Dragoman, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Bucharest, Dept Phys, Bucharest 077125, Romania Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania

Coccetti, F.
论文数: 0 引用数: 0
h-index: 0
机构:
CNRS, LAAS, F-31077 Toulouse, France Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania

Plana, R.
论文数: 0 引用数: 0
h-index: 0
机构:
CNRS, LAAS, F-31077 Toulouse, France Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania

Muller, A. A.
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h-index: 0
机构:
Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania
机构:
[1] Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania
[2] Univ Bucharest, Dept Phys, Bucharest 077125, Romania
[3] CNRS, LAAS, F-31077 Toulouse, France
关键词:
graphene;
high-frequency effects;
microwave switches;
planar waveguides;
CARBON;
TRANSPORT;
DEVICES;
D O I:
10.1063/1.3080130
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We investigated a double-clamped graphene device positioned over a planar waveguide in which propagate electromagnetic fields up to 60 GHz. Several double-clamped graphene flakes display good characteristics in enabling and disabling the propagation of high-frequency electromagnetic fields. The same characteristics were retrieved in a graphene switch based on the rapid change in the resistivity due to an applied gate voltage. Both devices are among the fastest switches, the switching time being very short less than 1 ns.
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