ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

被引：19

作者：

Lee, Chul-Ho ^{[3
,4
]}

Yoo, Jinkyoung ^{[3
,4
]}

Doh, Yong-Joo ^{[3
,4
]}

Yi, Gyu-Chul ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Seoul 151747, South Korea

[3] POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

[4] POSTECH, Natl Creat Res Initiat Ctr Semicond Nanorods, Pohang 790784, Gyeongbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

field effect transistors; II-VI semiconductors; magnesium compounds; nanostructured materials; nanotechnology; passivation; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; RADIAL NANOWIRE HETEROSTRUCTURES; FIELD-EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; TRANSPARENT; FABRICATION; DEVICES;

D O I：

10.1063/1.3075606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance.

引用

页数：3

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