Metallic III-V (001) surfaces: Violations of the electron counting model

被引：68

作者：

Whitman, LJ

Thibado, PM

Erwin, SC

Bennett, BR

Shanabrook, BV

机构：

[1] Naval Research Laboratory, Washington, DC

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.79.693

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe Sb-rich reconstructions of nearly lattice-matched AlSb and GaSb (001) surfaces using scanning tunneling microscopy/spectroscopy and first-principles electronic structure calculations. Whereas AlSb reconstructs to an insulating c(4 X 4) surface like that of other III-V compounds, GaSb forms c(2 X 10) and (2 X 10) surfaces that are weakly metallic and violate the electron counting model. We attribute the differences to a competition between the energy gain from Sb-Sb bond formation and the cost from the increased surface stress (which depends on the elastic properties of the substrate).

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页码：693 / 696

页数：4

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