Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

被引：1262

作者：

Tonndorf, Philipp ^{[1
]}

Schmidt, Robert ^{[1
]}

Boettger, Philipp ^{[1
]}

Zhang, Xiao ^{[1
]}

Boerner, Janna ^{[2
]}

Liebig, Andreas ^{[1
]}

Albrecht, Manfred ^{[1
]}

Kloc, Christian ^{[3
]}

Gordan, Ovidiu ^{[1
]}

Zahn, Dietrich R. T. ^{[1
]}

de Vasconcellos, Steffen Michaelis ^{[1
]}

Bratschitsch, Rudolf ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[2] Tech Univ Chemnitz, Inst Chem, D-09107 Chemnitz, Germany

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 04期

关键词：

KRAMERS-KRONIG ANALYSIS; REFLECTIVITY SPECTRA; 2H-MOSE2; PHONONS;

D O I：

10.1364/OE.21.004908

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form. (C) 2013 Optical Society of America

引用

页码：4908 / 4916

页数：9

共 40 条

[31]

SPAH R, 1983, APPL PHYS LETT, V43, P79, DOI 10.1063/1.94128

[32] Emerging Photoluminescence in Monolayer MoS2 [J].

Splendiani, Andrea ;

Sun, Liang ;

Zhang, Yuanbo ;

Li, Tianshu ;

Kim, Jonghwan ;

Chim, Chi-Yung ;

Galli, Giulia ;

Wang, Feng .

NANO LETTERS, 2010, 10 (04) :1271-1275

[33] HIGH-PRESSURE RAMAN-SPECTROSCOPY IN THE LAYERED MATERIALS 2H-MOS2, 2H-MOSE2, AND 2H-MOTE2 [J].

SUGAI, S ;

UEDA, T .

PHYSICAL REVIEW B, 1982, 26 (12) :6554-6558

[34] Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2 [J].

Tongay, Sefaattin ;

Zhou, Jian ;

Ataca, Can ;

Lo, Kelvin ;

Matthews, Tyler S. ;

Li, Jingbo ;

Grossman, Jeffrey C. ;

Wu, Junqiao .

NANO LETTERS, 2012, 12 (11) :5576-5580

[35] LATTICE MODE DEGENERACY IN MOS2 AND OTHER LAYER COMPOUNDS [J].

VERBLE, JL ;

WIETING, TJ .

PHYSICAL REVIEW LETTERS, 1970, 25 (06) :362-&

[36] INTERLAYER BONDING AND LOCALIZED CHARGE IN MOSE2 AND ALPHA-MOTE2 [J].

WIETING, TJ ;

GRISEL, A ;

LEVY, F .

PHYSICA B & C, 1980, 99 (1-4) :337-342

[37] INFRARED AND RAMAN STUDIES OF LONG-WAVELENGTH OPTICAL PHONONS IN HEXAGONAL MOS2 [J].

WIETING, TJ ;

VERBLE, JL .

PHYSICAL REVIEW B, 1971, 3 (12) :4286-&

[38] TRANSITION METAL DICHALCOGENIDES DISCUSSION AND INTERPRETATION OF OBSERVED OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES [J].

WILSON, JA ;

YOFFE, AD .

ADVANCES IN PHYSICS, 1969, 18 (73) :193-+

[39] Single-Layer MoS2 Phototransistors [J].

Yin, Zongyou ;

Li, Hai ;

Li, Hong ;

Jiang, Lin ;

Shi, Yumeng ;

Sun, Yinghui ;

Lu, Gang ;

Zhang, Qing ;

Chen, Xiaodong ;

Zhang, Hua .

ACS NANO, 2012, 6 (01) :74-80

[40] Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-M X2 semiconductors (M = Mo, W; X = S, Se, Te) [J].

Yun, Won Seok ;

Han, S. W. ;

Hong, Soon Cheol ;

Kim, In Gee ;

Lee, J. D. .

PHYSICAL REVIEW B, 2012, 85 (03)

← 1 2 3 4 →