Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing

被引：36

作者：

Hurley, PK ^{[1
]}

O'Sullivan, BJ

Cubaynes, FN

Stolk, PA

Widdershoven, FP

Das, JH

机构：

[1] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

[2] Philips Res Labs, B-3001 Louvain, Belgium

[3] STEAG RTP Syst, San Jose, CA 95134 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 03期

关键词：

D O I：

10.1149/1.1447946

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The purpose of this article is to report the results of an experiment designed to investigate the density of interface states (DOS) measured at the Si-SiO2 interface immediately following rapid thermal annealing (RTA) (1040degreesC) in a nitrogen (N-2) ambient. This work extends previous publications on Si(100) by examining (111), (110), and (100) silicon orientations. The DOS profiles were examined using a mercury probe capacitance-voltage technique, and characteristic peaks in the DOS across the energy gap were obtained for all orientations. Consideration of there results in relation to other works indicates that the peak features in the DOS profile after an RTA in N-2 are a consequence of unpassivated dangling bond defects for the respective orientations. The significance of these results is considered. (C) 2002 The Electrochemical Society.

引用

页码：G194 / G197

页数：4

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