STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING

被引：10

作者：

HSIEH, JC ^{[1
]}

FANG, YK ^{[1
]}

CHEN, CW ^{[1
]}

TSAI, NS ^{[1
]}

LIN, MS ^{[1
]}

TSENG, FC ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO LTD, HSINCHU, TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.353774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anomalous interface states were caused by post-oxide rapid thermal annealing in an n+ polycrystalline silicon metal-oxide-semiconductor capacitor. These anomalous interface states have been investigated using high/low frequency capacitance/gate voltage (C/V) measurements. An additional annealing process (450-degrees-C, 30 min in 90% N2/10% H-2 mixed gas) was found to improve the anomalous interface states. The improved results were identified using a constant current injection stress test.

引用

页码：5038 / 5042

页数：5

共 18 条

[1] EFFECT OF POST-OXIDATION ANNEAL ON ULTRATHIN SIO2 GATE OXIDES [J].