Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

被引：15

作者：

Bubel, S. ^{[1
]}

Meyer, S. ^{[1
]}

Kunze, F. ^{[1
]}

Chabinyc, M. L. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CARRIER TRANSPORT; GATE DIELECTRICS; SEMICONDUCTOR;

D O I：

10.1063/1.4824022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band. (C) 2013 AIP Publishing LLC.

引用

页数：5

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