Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

被引：57

作者：

Lee, Sungsik ^{[1
]}

Nathan, Arokia ^{[2
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; SILICON; CRYSTALLINE; DENSITY;

D O I：

10.1063/1.4751861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 x 10(19) cm(-3) eV(-1), respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751861]

引用

页数：5

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