SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer

被引：6

作者：

Arslan, Engin ^{[1
]}

Cakmakyapan, Semih ^{[1
]}

Kazar, Ozgur ^{[1
]}

Butun, Serkan ^{[1
]}

Lisesivdin, Sefer Bora ^{[2
]}

Cinel, Neval A. ^{[1
]}

Ertas, Gulay ^{[3
]}

Ardali, Sukru ^{[4
]}

Tiras, Engin ^{[4
]}

Jawad-ul-Hassan ^{[5
]}

Janzen, E. ^{[5
]}

Ozbay, Ekmel ^{[1
]}

机构：

[1] Bilkent Univ, Dept Elect & Elect Engn, Dept Phys, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[2] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey

[3] Bilkent Univ, Dept Chem, TR-06800 Bilkent, Turkey

[4] Anadolu Univ, Fac Sci, Dept Phys, TR-26470 Eskisehir, Turkey

[5] Linkoping Univ Technol, Dept Phys Chem & Biol, Linkoping, Sweden

来源：

ELECTRONIC MATERIALS LETTERS | 2014年 / 10卷 / 02期

关键词：

gaphene; parallel conduction; raman spectroscopy; hall measurements; PARALLEL CONDUCTION; RAMAN; SPECTRUM;

D O I：

10.1007/s13391-013-3159-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm(2)/Vs at 300 K) and one low-mobility carrier (1115 cm(2)/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.

引用

页码：387 / 391

页数：5

共 30 条

[1] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].

BECK, WA ;

ANDERSON, JR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :541-544

[2] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[3] First- and second-order Raman scattering from semi-insulating 4H-SiC [J].

Burton, JC ;

Sun, L ;

Long, FH ;

Feng, ZC ;

Ferguson, IT .

PHYSICAL REVIEW B, 1999, 59 (11) :7282-7284

[4] Raman fingerprint of charged impurities in graphene [J].

Casiraghi, C. ;

Pisana, S. ;

Novoselov, K. S. ;

Geim, A. K. ;

Ferrari, A. C. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[5] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[6] Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures [J].

Dziuba, Z ;

Antoszewski, J ;

Dell, JM ;

Faraone, L ;

Kozodoy, P ;

Keller, S ;

Keller, B ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :2996-3002

[7] Few-layer graphene on SiC, pyrolitic graphite, and graphene:: A Raman scattering study [J].

Faugeras, C. ;

Nerriere, A. ;

Potemski, M. ;

Mahmood, A. ;

Dujardin, E. ;

Berger, C. ;

de Heer, W. A. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[8] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[9] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[10] The growth and morphology of epitaxial multilayer graphene [J].

Hass, J. ;

de Heer, W. A. ;

Conrad, E. H. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)

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