Quantitative scanning near-field microwave microscopy for thin film dielectric constant measurement

被引：64

作者：

Karbassi, A. ^{[1
]}

Ruf, D. ^{[1
]}

Bettermann, A. D. ^{[1
]}

Paulson, C. A. ^{[1
]}

van der Weide, Daniel W. ^{[1
]}

Tanbakuchi, H. ^{[2
]}

Stancliff, R. ^{[2
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Agilent Technol, Santa Rosa, CA 95403 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.2953095

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We combine a scanning near-field microwave microscope with an atomic force microscope for use in localized thin film dielectric constant measurement, and demonstrate the capabilities of our system through simultaneous surface topography and microwave reflection measurements on a variety of thin films grown on low resistivity silicon substrates. Reflection measurements clearly discriminate the interface between similar to 38 nm silicon nitride and dioxide thin films at 1.788 GHz. Finite element simulation was used to extract the dielectric constants showing the dielectric sensitivity to be Delta epsilon(r)=0.1 at epsilon(r)=6.2, for the case of silicon nitride. These results illustrate the capability of our instrument for quantitative dielectric constant measurement at microwave frequencies. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2953095]

引用

页数：5

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