Temperature-dependent roughness of electronically excited InP surfaces

被引：37

作者：

Singh, JP

Singh, R

Mishra, NC

Kanjilal, D

Ganesan, V

机构：

[1] Ctr Nucl Sci, New Delhi 110067, India

[2] Inter Univ Ctr DAE Facil, Indore 110054, India

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.1416864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Topographical evolution of 100 MeV Au8+-ion-irradiated InP surfaces was studied using atomic-force microscopy (AFM). The surfaces were roughened under dense electronic excitations. Root-mean-square roughness measured from AFM studies showed an exponential saturation behavior with fluence. Sample temperature during irradiation was found as a parameter to control the amount of roughness on the surface and the evolution of irradiated surface topography is discussed in terms of thermal spike model. (C) 2001 American Institute of Physics.

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页码：5968 / 5972

页数：5

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