Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate

被引：21

作者：

Lacombe, D ^{[1
]}

Ponchet, A ^{[1
]}

Gerard, JM ^{[1
]}

Cabrol, O ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET,PAB,F-92225 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

D O I：

10.1063/1.118863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum boxes have been obtained by molecular beam epitaxy on a GaAs-on-Si substrate using the strained-induced 2D-3D transition. The boxes are examined by transmission electron microscopy and compared with those obtained under- the same growth conditions on a GaAs substrate. Although there exist 10(7) dislocations per cm(2) in the GaAs-on-Si substrate, high quality coherent strained islands are observed with a density slightly higher than on GaAs substrate. The behavior of the threading dislocations originating from the Si-GaAs interface when they cross the island plane is also investigated. Although some dislocations are bent in the island plane, the island distribution is apparently not affected by the vicinity of a threading dislocation. (C) 1997 American Institute of Physics.

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页码：2398 / 2400

页数：3

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