Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors

被引:33
作者
Hill, I. G. [1 ]
Weinert, C. M. [1 ]
Kreplak, L. [1 ]
van Zyl, B. P. [2 ]
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada
[2] St Francis Xavier Univ, Dept Phys, Antigonish, NS B2G 1C0, Canada
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 95卷 / 01期
基金
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词
ELECTRICAL CHARACTERISTICS; MOBILITY; LAYER;
D O I
10.1007/s00339-008-4992-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-assembled monolayers are widely used to modify the gate dielectric/semiconductor interface in organic thin-film transistors. By modifying the interaction between the molecular semiconductor and the substrate, thin-film ordering and the electronic properties of the semiconducting channel can be controlled. The modified semiconductor/dielectric properties result in macroscopically observed changes in the charge-carrier mobilities, threshold voltages, subthreshold swing and transfer characteristic hysteresis. The latter two are determined by the density of charge-trapping states at the interface. Here, we investigate the influence of the thickness of the self-assembled monolayer, via the alkyl chain length in n-alkyl phosphonic acid-based monolayers on SiO(2), on the electronic properties of pentacene-based organic thin-film transistors. Rather than a monotonic increase or decrease in performance with increasing chain length, we have found that the optimum performance occurs with chains of 8-10 carbon atoms. Atomic force microscopy shows a correlation between pentacene crystalline grain size and transistor performance.
引用
收藏
页码:81 / 87
页数:7
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