Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

被引：162

作者：

Yang, MH

Teo, KBK

Milne, WI

Hasko, DG

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Univ Cambridge, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2149991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting.

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页码：1 / 3

页数：3

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