Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

被引：15

作者：

Singh, Samarendra P. ^{[1
]}

Sonar, Prashant ^{[1
]}

Sellinger, Alan ^{[1
,2
]}

Dodabalapur, Ananth ^{[1
,3
]}

机构：

[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Stanford Univ, Dept Mat Sci & Engn, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[3] Univ Texas Austin, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

electron traps; heterojunction bipolar transistors; hole traps; THIN-FILM TRANSISTORS; ELECTRONICS; TRANSPORT; SEMICONDUCTOR; MOBILITY; SENSORS;

D O I：

10.1063/1.3064160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.

引用

页数：3

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