Flip Chip Bonding of 68 X 68 MWIR LED Arrays

被引:11
作者
Das, Naresh Chandra [1 ]
Taysing-Lara, Monica [1 ]
Olver, Kimberley Anderson [2 ]
Kiamilev, Fouad [3 ]
Prineas, J. P. [4 ]
Olesberg, J. T. [4 ]
Koerperick, E. J. [4 ]
Murray, L. M. [4 ]
Boggess, Tom F. [4 ]
机构
[1] USA, Microphoton Branch, Res Lab, Adelphi, MD 20783 USA
[2] USA, EO IR Mat & Devices Branch, Res Lab, Adelphi, MD 20783 USA
[3] Univ Delaware, Dept Elect Engn, Newark, DE 19716 USA
[4] Univ Iowa, Dept Phys, Iowa City, IA 52242 USA
来源
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING | 2009年 / 32卷 / 01期
关键词
CMOS drivers; contact resistance; flip chip bonding; led array; OHMIC CONTACTS;
D O I
10.1109/TEPM.2008.2005062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68 x 68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mu m-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
引用
收藏
页码:9 / 13
页数:5
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