Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

被引：19

作者：

Chang, S. J. ^{[1
]}

Chen, W. S.

Lin, Y. C.

Chang, C. S.

Ko, T. K.

Hsu, Y. P.

Shen, C. F.

Tsai, J. M.

Shei, S. C.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsin Shi 744, Taiwan

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2006年 / 29卷 / 03期

关键词：

flip-chip; GaN; light-emitting diodes (LED); reflective mirrors; transparent ohmic contact;

D O I：

10.1109/TADVP.2006.871189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni + Ag, Ni + Al, and Ni + Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.

引用

页码：403 / 408

页数：6

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