600 GHz InP/GaAsSb/InP DHBTs grown by MOCVD with a Ga(As,Sb) graded-base and fT x BVCEO > 2.5 THz-V at room temperature

被引：38

作者：

Liu, H. G. ^{[1
]}

Ostinelli, O. ^{[1
]}

Zeng, Y. ^{[1
]}

Bolognesi, C. R. ^{[1
]}

机构：

[1] ETH, Swiss Fed Inst Technol, IfH, THz Elect Grp, CH-8092 Zurich, Switzerland

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the realization of ternary base InP/Ga(As,Sb) DHBTs, where the grading is implemented by ramping the base As/Sb composition ratio from the collector to the emitter side: this enables a cutoff frequency f(T) of 603 GHz at room temperature with a breakdown voltage BV(CEO) = 4.2 V, for a record f(T) x BV(CEO) product of 2.53 THz-V. Device performance improves further with cooling to reach f(T) > 700 GHz with BV(CEO) = 4.4 V at 5 K. To the best of our knowledge, this represents the highest f(T) ever reported for a DHBT of any kind The f(T) x BV(CEO) > 3. 10 THz-V at 5 K is also unprecedented.

引用

页码：667 / 670

页数：4

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600 GHz InP/GaAsSb/InP DHBTs grown by MOCVD with a Ga(As,Sb) graded-base and fT x BVCEO &gt; 2.5 THz-V at room temperature

600 GHz InP/GaAsSb/InP DHBTs grown by MOCVD with a Ga(As,Sb) graded-base and fT x BVCEO > 2.5 THz-V at room temperature