Half-terahertz operation of SiGeHBTs

被引：73

作者：

Krithivasan, Ramkumar ^{[1
]}

Lu, Yuan

Cressler, John D.

Rieh, Jae-Sung

Khater, Marwan H.

Ahlgren, David

Freeman, Greg

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Korea Univ, Seoul 136701, South Korea

[3] IBM Microelect, Fishkill, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 07期

基金：

美国国家航空航天局;

关键词：

cryogenic temperatures; frequency response; heterojunction bipolar transistor (HBT); SiGeHBT; silicon-germanium (SiGe); terahertz;

D O I：

10.1109/LED.2006.876298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f(T)) of 510 GHz at 4.5 K was measured for a 0.12 x 1.0 mu m(2) SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an f(T) x BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

引用

页码：567 / 569

页数：3

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