GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer

被引：32

作者：

Chang, S. J. ^{[1
,2
]}

Lee, K. H. ^{[1
,2
]}

Chang, P. C. ^{[3
]}

Wang, Y. C. ^{[1
,2
]}

Yu, C. L. ^{[1
,2
]}

Kuo, C. H. ^{[4
]}

Wu, S. L. ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 737, Taiwan

[4] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan

[5] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 9-10期

关键词：

Multiple MgxNy-GaN buffer layers; photodetector (PD); ultraviolet (UV);

D O I：

10.1109/JQE.2008.2000916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair MgxNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxNy-GaN buffer layer. With a -2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 x 10(-6) and 1.44 x 10(-12) A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity.

引用

页码：916 / 921

页数：6

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