Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

被引：39

作者：

Delabie, Annelies ^{[1
]}

Brunco, David P. ^{[1
]}

Conard, Thierry ^{[1
]}

Favia, Paola ^{[1
]}

Bender, Hugo ^{[1
]}

Franquet, Alexis ^{[1
]}

Sioncke, Sonja ^{[1
]}

Vandervorst, Wilfried ^{[1
]}

Van Elshocht, Sven ^{[1
]}

Heyns, Marc ^{[1
]}

Meuris, Marc ^{[1
]}

Kim, Eunji ^{[2
]}

McIntyre, Paul C. ^{[2
]}

Saraswat, Krishna C. ^{[3
]}

LeBeau, James M. ^{[4
]}

Cagnon, Joel ^{[4
]}

Stemmer, Susanne ^{[4
]}

Tsai, Wilman ^{[5
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] Intel Corp, Santa Clara, CA 95052 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 12期

关键词：

D O I：

10.1149/1.2979144

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To increase complementary metal oxide semiconductor (CMOS) device performance, new materials are introduced in the gate stack (high-k dielectrics and metal gates) and the transistor channel (Ge, III-V materials). In this work we study the atomic layer deposition (ALD) of hafnium oxide on Ge and GaAs substrates. Passivation layers are required to achieve a sufficiently low interface state density, but these might also influence the growth behavior and dielectric quality. Therefore, we investigate the effect of surface preparation, for example, native oxide, wet clean, thermal oxidation, and S-passivation, for the HfCl(4)/H(2)O and tetrakis diethylamino hafnium=((C(2)H(5))(2)N)(4)Hf (TDEAH)/H(2)O processes. The growth of HfO(2) from initial submonolayer coverage to continuous HfO(2) film is studied by means of Rutherford backscattering, static time-of-flight secondary ion mass spectroscopy, and X-ray photoelectron spectroscopy. HfCl(4)/H(2)O ALD depends on the surface preparation. The growth is enhanced on oxide surfaces (thermally grown GeO(2), HF-cleaned Ge, and GaO(x)-AsO(y)) and inhibited on oxide-free substrates (HBr-cleaned Ge). The initial island growth regime is least pronounced on germanium oxide. In contrast, TDEAH/H(2)O ALD is independent of the surface preparation. The growth is inhibited in the first similar to 20 cycles on native oxide and S-passivated GaAs [(NH(4))(2)S treatment], but the initial island growth regime is quickly followed by the two-dimensional growth regime. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2979144] All rights reserved.

引用

页码：H937 / H944

页数：8

共 40 条

[11] Atomic layer deposition of hafnium oxide on germanium substrates [J].