Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

被引：20

作者：

Boo, JH

Yu, KS

Koh, W

Kim, Y

机构：

[1] Thin Film Materials Laboratory, Korea Res. Inst. Chem. Technol., Y., Taejon 305-600

来源：

MATERIALS LETTERS | 1996年 / 26卷 / 4-5期

关键词：

MgO films; CVD; metalorganic; GaAs substrates;

D O I：

10.1016/0167-577X(95)00227-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd)(2) as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300 degrees C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500 degrees C was found to induce breaking of the GaAs surfaces.

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收藏

页码：233 / 236

页数：4

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