Double-sided cooling for high power IGBT modules using flip chip technology

被引：110

作者：

Gillot, C ^{[1
]}

Schaeffer, C

Massit, C

Meysenc, L

机构：

[1] CEA, LETI, F-38054 Grenoble, France

[2] Lab Electrotech Grenoble, F-38402 St Martin Dheres, France

[3] Alstom Technol, Power Elect Res Team, F-65600 Semeac, France

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2001年 / 24卷 / 04期

关键词：

heat sink; IGBT; interconnection; microchannel; power module;

D O I：

10.1109/6144.974963

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

A new technique for the packaging of IGBT modules has been developed. The components are sandwiched between two direct bond copper (DBC) substrates with aluminum nitride. Wire bonds are replaced with flip chip solder bumps, which allows to cool components on both sides. Microchannel heat sinks are directly integrated in the package to decrease the thermal resistance of the module. Thus, a very compact module with high thermal performance is obtained. A prototype with two insulated gate bipolar transistors (IGBTs) and four diodes associated in parallel was realized and tested. In this paper, the innovative packaging technique is described, and results of thermal tests are presented.

引用

页码：698 / 704

页数：7

共 10 条

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[2]

BEJAN A, 1984, CONVECTION HEAT TRAN, P75

[3]

FISHER R, 1995, APPL POWER ELECT CO, P12, DOI 10.1109/APEC.1995.468955

[4]

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