Low energy electron-enhanced etching of GaAs(100) in a chlorine hydrogen dc plasma

Low energy electron-enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low-pressure hydrogen/chlorine de discharge. Samples etched at room temperature reveal good anisotropy (>20), good selectivity (>200 against SiO2 masks at room temperature), and smooth surfaces at etch rates of 250 Angstrom/min; etch rates up to 4.5 mu m/min were achieved at 150 degrees C The dependence of the etch characteristics on gas composition, pressure, and temperature is described. (C) 1996 American Institute of Physics.