Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers

被引：20

作者：

Alexandropoulos, D ^{[1
]}

Adams, MJ ^{[1
]}

机构：

[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 13期

关键词：

D O I：

10.1088/0953-8984/14/13/310

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present calculations of the material gain, differential gain and linewidth enhancement factor (alpha) for GaInNAs/GaAs quantum wells based on the free-carrier theory. We explore the effect of N composition on peak differential gain and transparency concentration. The nitrogen-induced conduction band non-parabolicity is accounted for through the band anti-crossing model, and valence band mixing effects and strain are treated exactly. The alpha factor is found to have similar values to those of the conventional material InGaAsP/InP, which is encouraging for the use of GaInNAs as the active material for a high speed emitter.

引用

页码：3523 / 3536

页数：14

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