Non-tilting out-of-plane mode high-Q mechanical silicon oscillator

被引:7
作者
Hahtela, O [1 ]
Chekurov, N [1 ]
Tittonen, I [1 ]
机构
[1] Helsinki Univ Technol, Ctr New Mat, FIN-02015 Espoo, Finland
关键词
D O I
10.1088/0960-1317/15/10/009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single-crystal silicon oscillator with a non-tilting out-of-plane vibrational mode and high-quality factor for the mechanical resonance was designed, fabricated and characterized. The finite-element method (FEM) was utilized before the fabrication process to simulate the oscillator behavior and give guidance in optimizing the design. At low pressure p = 10(-3) mbar and at room temperature, the resonance frequency and Q value were measured to be f(0) = 26 5 26 Hz and Q = 100 000, respectively. The measured resonance frequency was in a good agreement with the simulated one, f(0),(FEM) = 26 787 Hz. The actual mode pattern was verified by measurements and compared with the simulation result. An interferometric laser beam was scanned over the oscillator surface and position-dependent oscillation amplitudes were stored with the phase-sensitive detection. The oscillation was proved to occur effectively in a pure non-tilting out-of-plane mode. We propose to use this kind of micromechanical probe in various measurement schemes, where one needs to approach the surface with a single non-torsional plane. In addition, such an oscillator can be utilized as an optical mirror so that the optical mode can be kept the same when moving the mirror.
引用
收藏
页码:1848 / 1853
页数:6
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