X-ray absorption spectroscopy and valence band photoemission spectroscopy investigations of the Ge(111) surface above the 1050 K high-temperature phase transition

被引:8
作者
Paolicelli, G
Dhanak, VR
Goldoni, A
Modesti, S
Sancrotti, M
Santoni, A
机构
[1] UNIV LIVERPOOL,IRC SURFACE SCI,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND
[2] INFM,LAB TASC,I-34012 TRIESTE,ITALY
[3] UNIV TRIESTE,DIPARTIMENTO FIS,I-34100 TRIESTE,ITALY
[4] ENEA,INN,DIV NUOVI MAT,I-00100 ROME,ITALY
[5] POLITECN MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY
关键词
ELECTRONIC-STRUCTURE; DIFFRACTION; METALLIZATION;
D O I
10.1088/0953-8984/9/9/010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The Ge(lll) surface has been investigated as the temperature was varied in the 300 K-1150 K range by valence band (VB) photoemission spectroscopy and x-ray absorption spectroscopy above the Ge 3d edge. VB photoemission shows that the high-temperature surface has a metallic character and that at temperatures above the 1050 K high-temperature phase transition a clear change of the surface electronic structure occurs. Metallicity at high temperature was also detected by absorption spectroscopy which shows the presence of a well-defined Fermi edge at an energy value consistent with earlier core photoemission results. From absorption data and numerical simulations the width of the Ge(111) surface conduction band was found to be 1.1 eV.
引用
收藏
页码:1959 / 1966
页数:8
相关论文
共 23 条
[1]   ELECTRONIC-STRUCTURE OF THE GE(111)-C(2X8) SURFACE [J].
AARTS, J ;
HOEVEN, AJ ;
LARSEN, PK .
PHYSICAL REVIEW B, 1988, 37 (14) :8190-8197
[2]   SURFACE PHASE-TRANSITIONS ON CLEAN GE(111) STUDIED BY SPECTROSCOPIC ELLIPSOMETRY [J].
ABRAHAM, M ;
LELAY, G ;
HILA, J .
PHYSICAL REVIEW B, 1990, 41 (14) :9828-9835
[3]   ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J].
BRINGANS, RD ;
HOCHST, H .
PHYSICAL REVIEW B, 1982, 25 (02) :1081-1089
[4]   SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1 [J].
BRINGANS, RD ;
UHRBERG, RIG ;
BACHRACH, RZ .
PHYSICAL REVIEW B, 1986, 34 (04) :2373-2380
[5]   NEW C-2X8 UNIT-CELL FOR THE GE(111) SURFACE [J].
CHADI, DJ ;
CHIANG, C .
PHYSICAL REVIEW B, 1981, 23 (04) :1843-1846
[6]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[7]   SURFACE-DIFFUSION AND PHASE-TRANSITION ON THE GE(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
FEENSTRA, RM ;
SLAVIN, AJ ;
HELD, GA ;
LUTZ, MA .
PHYSICAL REVIEW LETTERS, 1991, 66 (25) :3257-3260
[8]   ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING [J].
HIMPSEL, FJ ;
EASTMAN, DE ;
HEIMANN, P ;
REIHL, B ;
WHITE, CW ;
ZEHNER, DM .
PHYSICAL REVIEW B, 1981, 24 (02) :1120-1123
[9]   OBSERVATION OF METASTABLE STRUCTURAL EXCITATIONS AND CONCERTED ATOMIC MOTIONS ON A CRYSTAL-SURFACE [J].
HWANG, IS ;
GOLOVCHENKO, J .
SCIENCE, 1992, 258 (5085) :1119-1122
[10]   NEW EXPERIMENTAL RESULTS ON THE ELECTRONIC-STRUCTURE OF LIQUID-METALS BY ELECTRON-SPECTROSCOPY [J].
INDLEKOFER, G ;
OELHAFEN, P ;
LAPKA, R ;
GUNTHERODT, HJ .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1988, 157 :465-470