Patterning a surface on the nanometric scale by ion sputtering

被引：102

作者：

Rusponi, S

Costantini, G

de Mongeot, FB

Boragno, C

Valbusa, U ^{[1
]}

机构：

[1] CNR, CFSBT, INFM, Unita Genova, I-16146 Genoa, Italy

[2] Dipartimento Fis, I-16146 Genoa, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface etching by ion sputtering, besides producing equilibrium-oriented patterns similar to those obtained by molecular beam epitaxy (MBE), can also be used to pattern the surface along nonequilibrium orientations, thus extending the possibilities of MBE. By tuning the competition between ion erosion at grazing angles and diffusion-induced surface reorganization, it is, for example, possible to pattern a substrate characterized by a square symmetry with a well-ordered ripple structure running along any desired direction. (C) 1999 American Institute of Physics. [S0003-6951(99)03747-X].

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页码：3318 / 3320

页数：3

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