Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy

被引：41

作者：

Gwo, S

Tokumoto, H

Miwa, S

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

[2] ANGSTROM TECHNOL PARTNERSHIP,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 03期

关键词：

D O I：

10.1063/1.119538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ scanning tunneling microscopy and time-resolved reflection high-energy electron diffraction measurements were performed to study the nitridation process of the As-terminated GaAs(001)-(2x4) surface by using electron cyclotron resonance plasma-assisted molecular-beam epitaxy. We report the real-space atomic structure of the coherently strained (3x3)-ordered GaN monolayer on GaAs(001) after a limited-exposure nitridation process and the atomically smooth morphology of this nitrided surface. The unique (3x3) phase is found consisting of nitrogen dimers and a regular array of missing nitrogen rows in both [<(1)over bar 10>] and [110] directions. (C) 1997 American Institute of Physics.

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页码：362 / 364

页数：3

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