From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation

被引：454

作者：

Komsa, Hannu-Pekka ^{[1
]}

Kurasch, Simon ^{[2
]}

Lehtinen, Ossi ^{[2
]}

Kaiser, Ute ^{[2
]}

Krasheninnikov, Arkady V. ^{[1
,3
]}

机构：

[1] Univ Helsinki, Dept Phys, Helsinki 00014, Finland

[2] Univ Ulm, Grp Electron Microscopy Mat Sci, Cent Facil Electron Microscopy, D-89081 Ulm, Germany

[3] Aalto Univ, Dept Appl Phys, Aalto 00076, Finland

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 03期

基金：

芬兰科学院;

关键词：

VALLEY POLARIZATION; BORON-NITRIDE; PHASE GROWTH; GRAPHENE; LAYERS; SEMICONDUCTORS; DISLOCATION; FABRICATION; NANOTUBES; SCALE;

D O I：

10.1103/PhysRevB.88.035301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By combining high-resolution transmission electron microscopy experiments and first-principles calculations, we study production, diffusion, and agglomeration of sulfur vacancies in monolayer MoS2 under electron irradiation. Single vacancies are found to be mobile under the electron beam and tend to agglomerate into lines. Different kinds of such extended defects are identified in the experiments, and their atomic structures and electronic properties are determined with the help of calculations. The orientation of line defects is found to be sensitive to mechanical strain. Our calculations also indicate that the electronic properties of the extended defects can be tuned by filling vacancy lines with other atomic species, thereby suggesting a way for strain and electron-beam-assisted engineering of MoS2-based nanostructures .

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页数：8

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