Effect of nitrogen on denuded zone in Czochralski silicon wafer

被引：18

作者：

Cui, C ^{[1
]}

Yang, DR ^{[1
]}

Yu, XG ^{[1
]}

Ma, XY ^{[1
]}

Li, LB ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of nitrogen on the denuded zone (DZ) in Czochralski CZ silicon has been investigated. After the DZ formation, the CZ and the nitrogen-doped CZ (NCZ) silicon wafers were subjected to prolonged annealing. It is found that the DZ of the NCZ silicon only shrinks a little during the prolonged annealing, and no new oxygen precipitates are formed in the DZ, which is the same as the corresponding CZ wafer. Therefore, it is considered that no tiny oxygen precipitates existed in the DZ of the NCZ-Si by IG treatment, which can satisfy the requirements of microelectronics industry. Based on the facts, the effect mechanism of nitrogen on the DZ is discussed.

引用

页码：548 / 551

页数：4

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