Γ-X mixing in phosphorus-doped silicon nanocrystals: Improvement of photon generation efficiency

被引：23

作者：

Belyakov, Vladimir A. ^{[1
]}

Burdov, Vladimir A. ^{[1
]}

机构：

[1] Univ Nizhniy Novgorod, Dept Theoret Phys, Nizhnii Novgorod 603950, Russia

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 03期

关键词：

band structure; doping profiles; electronic structure; elemental semiconductors; nanostructured materials; phosphorus; photoluminescence; semiconductor doping; silicon; SI NANOCRYSTALS; ION-IMPLANTATION; MATRIX-ELEMENTS; ELECTRON-PHONON; POROUS-SILICON; QUANTUM DOTS; PHOTOLUMINESCENCE; ABSORPTION; SEMICONDUCTORS; TRANSITIONS;

D O I：

10.1103/PhysRevB.79.035302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been shown theoretically that the central-cell potential of phosphorus ion(s) embedded in a silicon nanocrystal effectively mixes electronic states of X and Gamma bands. Such a mixing, enhanced by the quantum confinement effect, straightens the nanocrystal band structure and substantially intensifies interband radiative recombination. We have found that it is possible to manipulate the radiative decay rate by varying phosphorus concentration in the nanocrystal.

引用

页数：9

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