Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide

被引：11

作者：

Ishimaru, M ^{[1
]}

Sickafus, KE

机构：

[1] Univ Calif Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[2] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H-SiC single crystals with [0001] orientation were irradiated with 180 keV O+ ions at 650 degrees C to fluences ranging from 0.2x10(18) to 1.4x10(18)/cm(2). No continuous buried amorphous layer was formed in the specimen with 0.2x10(18) O+/cm(2), although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4x10(18) O+/cm(2), and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7x10(18) and 1.4x10(18) O+/cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)03236-2].

引用

页码：1392 / 1394

页数：3

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