Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

被引：764

作者：

Pu, Jiang ^{[2
]}

Yomogida, Yohei ^{[2
,3
]}

Liu, Keng-Ku ^{[1
]}

Li, Lain-Jong ^{[1
]}

Iwasa, Yoshihiro ^{[4
,5
,6
]}

Takenobu, Taishi ^{[2
]}

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 11529, Taiwan

[2] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan

[3] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

[4] RIKEN, Correlated Electron Res Grp, Wako, Saitama 3510198, Japan

[5] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

NANO LETTERS | 2012年 / 12卷 / 08期

关键词：

Two-dimensional material; transition metal dichalcogenide; molybdenum disulfide; electric double-layer transistor; flexible electronics; GATE DIELECTRICS; CAPACITANCE; CIRCUITS; LIQUID;

D O I：

10.1021/nl301335q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V.s)) and a high on/off current ratio (10(5)). Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS2 films make them suitable for use in large-area flexible electronics.

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收藏

页码：4013 / 4017

页数：5

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